It is cutthroat competition out there in every field and companies realise the importance of�uniqueness�pretty well. They have to keep launching new products that are different from others to stay ahead of the game. Samsung seems to be fighting for the top place with the announcement of 64GBs of flash memory. The newly announced product will boast 3-bit-cell (3bit), 64 gigabit (Gb) NAND flash using 20 nanometer (nm)-class processing technology.

"Samsung has repeatedly provided the market with leading-edge NAND flash solutions, including the introduction of 30nm-class*, 32Gb 3-bit NAND flash last November," said Seijin Kim, vice president, Flash Memory Planning/Enabling, Samsung Electronics. "By now entering into full production of 20nm-class 64Gb 3-bit devices, we expect to accelerate adoption of our high-performance NAND solutions that use Toggle DDR technology, for applications that also require high-density NAND."

The availability of storage density as high as eight gigabytes (64Gb) in a single chip will trigger widespread acceptance of Toggle DDR-based high-performance flash in UFDs and SD cards, as well as smart phones and SSDs, while replacing previous four gigabyte (32Gb) devices in the market.

Samsung's 20nm-class, 64Gb 3-bit NAND has a 60 percent higher productivity level than 30nm-class, 32Gb 3-bit NAND. The device also offers improved performance by applying Toggle DDR (Double Data Rate) 1.0 specifications, compared to those of SDR (Single Data Rate) based 30nm-class NAND chips.

[via Businesswire]